ISPSD 2016 Detailed Technical Program

Monday, June 13, 2016

 

09:00–09:20   Velký sál
Opening Session
    Welcome
Jan Šonský, General Chair (NXP Semiconductors, Belgium)
    Programme Introduction
Oliver Häberlen, Technical Program Chair (Infineon Technologies, Austria)
    ISPSD 2015 Best Paper Award
Johnny K.O. Sin (General Chair ISPSD’15), Kuang Sheng (Technical Program Chair ISPSD’15)
 
09:20–10:40   Velký sál
A1L-A
Plenary Session 1

Chairs: Jan Šonský (NXP Semiconductors, Belgium)
              Oliver Häberlen (Infineon Technologies, Austria)
09:20–10:00   Semiconductor Financing: Recent Trends
Brittany Bagley
KKR, United States
10:00–10:40   Electric Vehicles and Expectations for Wide Bandgap Power Devices
Masakatsu Hoshi
Nissan Motor Co., Ltd., Japan
 
10:40–11:10   Coffee Break
 
11:10–12:30   Velký sál
A2L-A
Plenary Session 2

Chairs: Mutsuhiro Mori (Hitachi, Japan)
              John Shen (Illinois Institute of Technology, United States)
11:10–11:50   Impact of Power Electronic Device Development on Power Grids
YuFeng Qiu, ChaoBo Dai, Rui Jin
Global Energy Interconnection Research Institute, China
11:50–12:30   The Ideal Switch Is Not Enough
Johann W. Kolar, Dominik Bortis, Dominik Neumayr
ETH Zurich, Switzerland
 
12:30–14:00   Lunch Break
 
14:00–15:40   Velký sál
A3L-A
Gallium Nitride – Technology & Characterization

Chairs:  Oliver Häberlen (Infineon Technologies, Austria)
               Alex Huang (North Carolina State University, United States)
14:00–14:25   Through Recessed and Regrowth Gate Technology for Realizing Process Stability of GaN-GITs
Hideyuki Okita, Masahiro Hikita, Akihiko Nishio, Takahiro Sato, Keiichi Matsunaga, Hisayoshi Matsuo, Masaya Mannoh, Yasuhiro Uemoto
Panasonic Semiconductor Solutions Co., Ltd., Japan
14:25–14:50   Quantitative Characterization of the Trapped Charge Profile in GaN HEMTs by Sense Nodes in the Drain-Extension Region
Jeroen A. Croon1, Fred A.M. Hurkx1, Johan J.T.M. Donkers1, Saurabh Pandey2, Jan Šonský3
1NXP Semiconductors Eindhoven, The Netherlands; 2NXP Semiconductors Manchester, United Kingdom; 3NXP Semiconductors Leuven, Belgium
14:50–15:15   Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors
Xi Tang1, Baikui Li2, Hanxing Wang1, Jin Wei1, Gaofei Tang1, Zhaofu Zhang1, Kevin J. Chen1
1The Hong Kong University of Science and Technology, Hong Kong; 2Shenzhen University, China
15:15–15:40   Experimental Demonstration of Weibull Distributed Failure in p-Type GaN High Electron Mobility Transistors under high forward bias stress
Isabella Rossetto1, Matteo Meneghini1, Riccardo Silvestri1, Stefano Dalcanale1, Enrico Zanoni1, Gaudenzio Meneghesso1, Oliver Hilt2, Eldad Bahat-Treidel2, Joachim Wuerfl2
1University of Padova, Italy; 2Ferdinand-Braun Institute, Germany
 
15:40–17:40   Malý sál
Coffee & Poster Session

Chair: Alberto Castellazzi (University of Nottingham, United Kingdom)
    A4P-C
Silicon Carbide (Poster Session)
    Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET under Various Stress Conditions
Toru Hiyoshi, Kosuke Uchida, Mitsuhiko Sakai, Masaki Furumai, Takashi Tsuno, Yasuki Mikamura
Sumitomo Electric Industries, Japan
    10kV SiC MPS Diodes for High Temperature Applications
Yifan Jiang1, Woongje Sung1, Xiaoqing Song1, Haotao Ke1, Siyang Liu1, B. Jayant Baliga1, Alex Q. Huang1, Edward Van Brunt2
1North Carolina State University, United States; 2Wolfspeed, A Cree Company Inc., United States
    Influence of Design Parameters on the Short-Circuit Ruggedness of SiC Power MOSFETs
Gianpaolo Romano1, Michele Riccio1, Luca Maresca1, Giovanni Breglio1, Andrea Irace1, Asad Fayyaz2, Alberto Castellazzi2
1 University of Naples Federico II, Italy; 2University of Nottingham, United Kingdom
    Cosmic Radiation Ruggedness of Si and SiC Power Semiconductors
Christian Felgemacher1, Samuel Vasconcelos Araújo1, Peter Zacharias1, Karl Nesemann2, Artjom Gruber2
1University of Kassel, Germany; 2SMA Solar Technology AG, Germany;
    Recent progress on diamond Schottky diode
David Eon1,2, Aboulaye Traoré3, Julien Pernot1,2,4, Etienne Gheeraert1,2
1Université Grenoble Alpes, France; 2CNRSInstitut NÉEL, France; 3AIST, Japan; 4Institut Universitaire de France, France
    Silicon Carbide Split-Gate MOSFET with Merged Schottky Barrier Diode and Reduced Switching Loss
Huaping Jiang1,2, Jin Wei3, Xiaoping Dai1,2, Maolong Ke1, Changwei Zheng1,2, Ian Deviny1
1Dynex Semiconductor Ltd., United Kingdom; 2Zhuzhou CRRC Times Electric Co. Ltd., China,  3The Hong Kong University of Science and Technology, China
    A Trade-Off Between Nominal Forward Current Density and Surge Current Capability for 4.5kV SiC MPS Diodes
Yaren Huang1, Tobias Erlbacher2, Jonas Büttner2, Gerhard Wachutka1
1Technical University of Munich, Germany; 2Fraunhofer IISB, Germany;
    Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/µs
Edward Van Brunt, Gangyao Wang, Jimmy Liu, Vipindas Pala, Brett Hull, Jim Richmond, John Palmour
Wolfspeed, A Cree Company, United States
    Zero reverse recovery in SiC and GaN Schottky diodes: a Comparison
Loizos Efthymiou1, Gianluca Camuso1, Giorgia Longobardi1, Florin Udrea1, Evelyn Lin2, Terry Chien2, Max Chen2
1University of Cambridge, United Kingdom; 2Vishay General Semiconductor, Taiwan
    Performance Tradeoffs for Ultra-High Voltage (15 kV to 25 kV) 4H-SiC n-Channel and p-Channel IGBTs
Sauvik Chowdhury, T. Paul Chow
Rensselaer Polytechnic Institute, United States
 
    A4P-D
Gallium Nitride (Poster Session)
    First Experimental Demonstration of Solid State Circuit Breaker (SSCB) Using 650V GaN-Based Monolithic Bidirectional Switch
Z. John Shen1, Zhenyu Miao1, Aref M. Roshandeh1, Peter Moens2, Herbert Devleeschouwer2, Ali Salih3, Balaji Padmanabhan3, Woochul Jeon3
1Illinois Institute of Technology, United States; 2ON Semiconductor, Belgium; 3ON Semiconductor, United States
    Poly-Silicon CMOS compatible Gate Module for AlGaN/GaN-on-Silicon MIS-HEMTs for Power Electronics Applications
Simon Jauss1, Stephan Schwaiger1, Walter Daves1, Oliver Ambacher2
1Robert Bosch GmbH, Germany;  2Fraunhofer Institute for Applied Solid State Physics, Germany;
    Threshold Voltage Modulation by Interface Charge Engineering for High Performance Normally-Off GaN MOSFETs with High Faulty Turn-on Immunity
Qi Zhou, Anbang Zhang, Ruopu Zhu, Yuanyuan Shi, Zeheng Wang, Li Liu, Bowen Chen, Y. Jin, Wanjun Chen, Bo Zhang
University of Electronic Science and Technology of China, China
    AlGaN/GaN Power Schottky Diodes with Anode Dimension Up to 100 mm on 200 mm Si Substrate
Silvia Lenci, Jie Hu, Nicolo Ronchi, Stefaan Decoutere
imec, Belgium
    Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Niels E. Posthuma, Shuzhen You, Hu Liang, Nicolo Ronchi, Xuanwu Kang, Dirk Wellekens, Yoga Saripalli, Stefaan Decoutere
imec, Belgium
    Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications
Jin Wei1, Huaping Jiang2,3, Qimeng Jiang1, Kevin J. Chen1
1The Hong Kong University of Science and Technology, Hong Kong; 2Dynex Semiconductor Ltd., United Kingdom; 3ZhuZhou CRRC Times Electric Co. Ltd., China
    Reverse-biased induced mechanical stress in AlGaN/GaN power diodes
Maire Power1, James Pomeroy1, Indranil Chatterjee1, Dilip Risbud2, Barry Wynne3, Mark Gajda3, Jan Šonský4, Kenneth Pedrotti2, Michael Uren1, Martin Kuball1
1University of Bristol, United Kingdom;  2University of California, Santa Cruz, United States; 3NXP Semiconductors UK Ltd., United Kingdom; 4NXP Semiconductors, Belgium
    GaN HEMTs with Multi-Functional p-Diamond Back-barriers
Yuhao Zhang1, Tomás Palacios1, Koon Hoo Teo2
1Massachusetts Institute of Technology, United States; 2Mitsubishi Electric Research Laboratories, United States
    A Novel Normally-off GaN MISFET with an In-situ AlN Space Layer using Selective Area Growth
Liang He, Fan Yang, Yiqiang Ni, Yue Zheng, Liuan Li, Zhisheng Wu, Baijun Zhang, Yang Liu
Sun Yat-Sen University, China
    Optimization of gate insulator material for GaN MIS-HEMT
Yueh-Chin Lin1, Tai-Wei Lin1, Chia-Hsun Wu1, Jing-Neng Yao1, Heng-Tung Hsu1, Wang-Cheng Shih1, Kuniyuki Kakushima2, Kazuo Tsutsui2, Hiroshi Iwai1,2, Edward-Yi Chang1,2
1National Chiao-Tung University, Taiwan; 2Tokyo Institute of Technology, Japan
    Quality and Reliability of in-situ Al2O3 MOS capacitors for GaN-based Power Devices
Davide Bisi1, Silvia H. Chan2, Maher Tahhan2, Onur S. Koksaldi2, Stacia Keller2, Matteo Meneghini1, Gaudenzio Meneghesso1, Enrico Zanoni1, Umesh K. Mishra2
1University of Padova, Italy; 2University of California, Santa Barbara, United States
    Quasi-Bipolar Channel Modulation Instability Analysis for P-GaN gate High Electron Mobility Transistor
Cen Tang, Xueyang Li, Mingchen Hou, Gang Xie, Kuang Sheng
Zhejiang University, China
 
    A4P-E
Packaging & Integration (Poster Session)
    Reliability Model Application for Power Devices using Mechanical Strain Real Time Mapping
Saverio Panarello1, Francesca Garescì1, Claudia Triolo1, Salvatore Patanè1, Davide Patti2, Sebastiano Russo2
1University of Messina, Italy; 2STMicroelectronics, Italy;
    Material Evaluation and Development Support Project for High Current SiC Power Module
Tomohiro Iguchi1, Akio Takahashi2, Hitoshi Habuka2
1Toshiba Corporation, Japan; 2Yokohama National University, Japan
    Towards vertical power device 3D packaging on 8-inch wafer
Bastien Letowski1, Julie Widiez1, Marc Rabarot1, William Vandendaele1, Bruno Imbert1, Nicolas Rouger2, Jean-Christophe Crébier2
1Université Grenoble Alpes, France; 2G2Elab, Université Grenoble Alpes/CNRS, , France
    Flip-chip Assembly and 3D Stacking of 1000V Lateral IGBT (LIGBT) Dies
Tanya Trajkovic1, Nishad Udugampola1, Vasantha Pathirana1, Florin Udrea1, John Smithells2, Tracy Wotherspoon2
1Cambridge Microelectronics Ltd, United Kingdom; 2Microsemi Semiconductor Ltd, United Kingdom;
    Over Current Breaker Based on the Dual Thyristor Principle
Alexander Würfel1, Johannes Adler1, Anton Mauder2, Nando Kaminski1
1University of Bremen, Germany;  2Infineon Technologies AG, Germany
    Hybrid half-bridge package for high voltage application
Bassem Mouawad, Jianfeng Li, Alberto Castellazzi, C. Mark Johnson
University of Nottingham, United Kingdom
 
19:00   Public Spa (Občanská plovárna)
Welcome Reception

Tuesday, June 14, 2016

 

08:30–10:10   Velký sál
B1L-A
High Voltage – IGBT 1

Chairs: Thomas Laska (Infineon Technologies, Germany)
              Tomoyuki Yamazaki (Fuji Electric Systems, Japan)
08:30–08:55   Demonstration of an Enhanced Trench Bimode Insulated Gate Transistor ET-BIGT
Munaf Rahimo, Maxi Andenna, Liutauras Storasta, Chiara Corvasce, Arnost Kopta
ABB Switzerland Ltd. Semiconductors, Switzerland
08:55–09:20   High Switching Speed Trench Diode for 1200V RC-IGBT Based on the Concept of Schottky Controlled Injection (SC)
Ryohei Gejo, Tsuneo Ogura, Shinichiro Misu, Yosuke Maeda, Yuma Matsuoka, Norio Yasuhara, Kazutoshi Nakamura
Toshiba Corporation, Japan
09:20–09:45   The Second-generation 600V RC-IGBT with Optimized FWD
Takuya Yoshida1, Tetsuo Takahashi2, Kenji Suzuki2, Masayoshi Tarutani2
1MELCO Semiconductor Engineering Corporation, Japan; 2Mitsubishi Electric Corporation Power Device Works, Japan
09:45–10:10   Simulation and Experimental Results of 3.3kV Cross Switch “Si-IGBT and SiC-MOSFET” Hybrid
Umamaheswara Reddy Vemulapati1, Andrei Mihaila1, Renato Amaral Minamisawa1, Francisco Canales1, Munaf Rahimo2, Charalampos Papadopoulos2
1ABB Switzerland Ltd., Corporate Research, Switzerland;  2ABB Switzerland Ltd. Semiconductors, Switzerland
 
08:30–10:10   Malý sál
B1L-B
Low Voltage – LDMOS

Chairs: Dev Alok Girdhar (Intersil, United States)
              Chanho Park (Vishay, United States)
08:30–08:55   A Recessed Gate LDMOSFET for Alleviating HCI Effects
Hiroki Fujii, Takahiro Mori, Takashi Ipposhi
Renesas Semiconductor Manufacturing Corporation, Japan
08:55–09:20   Accumulation mode triple gate SOI LDMOS with ultralow on-resistance and enhanced transconductance
Jie Wei, Xiaorong Luo, Da Ma, Junfeng Wu, Zhaoji Li, Bo Zhang
University of Electronic Science and Technology of China, China
09:20–09:45   NBTI of Buried Oxide Layer Induced Degradation for Thin Layer SOI Field pLDMOS
Xin Zhou, Ming Qiao, Wen Yang, Yitao He, Zhuo Wang, Zhaoji Li, Bo Zhang
University of Electronic Science and Technology of China, China
09:45–10:10   Novel Procedure to Improve LDMOS ESD Characteristics by Optimizing Drain Structure
Kanako Komatsu, Keita Takahashi, Tadaomi Sakurai, Takehito Ikimura, Masaki Sakai, Koji Kimura, Fumitomo Matsuoka
Toshiba Corporation Storage & Electronic Devices Solutions Company, Japan
 
10:10–10:40   Coffee Break
 
10:40–12:20   Velký sál
B2L-A
Packaging & Integration – Discrete Devices, Finishing and Characterisation

Chairs: Josef Lutz (Technical University of Chemnitz, Germany)
               Katsuaki Saito (Hitachi, Japan)
10:40–11:05   A Compact GaN Bi-directional Switching Diode with a GaN Bi-directional Power Switch and an Isolated Gate Driver
Shuichi Nagai, Yasuhiro Yamada, Miori Hiraiwa, Hiroaki Ueno, Songbaek Choe, Yasufumi Kawai, Osamu Tabata, Go Yamada, Noboru Negoro, Masahiro Ishida
Panasonic Corporation, Japan
11:05–11:30   Thermal Feedback Blocks for Fast and Reliable Electrothermal Circuit Simulation of Power Circuits at Module Level
Alessandro Magnani1, Fabio Di Napoli1, Michele Riccio1, Pierluigi Guerriero1, Vincenzo d'Alessandro1, Giovanni Breglio1, Santolo Daliento1, Andrea Irace1, Niccolò Rinaldi1, Lorenzo Codecasa2
1University of Naples Federico II, Italy;  1Politecnico di Milano, Italy
11:30–11:55   Online Junction Temperature Measurements for Power Cycling Power Modules with High Switching Frequencies
Julio Brandelero, Jeffrey Ewanchuk, Stefan Mollov
Mitsubishi Electric Research Centre Europe, France
11:55–12:20   Power Cu Metallization for Future Power Devices - Process Integration Concept and Reliability
Roman Roth1, Holger Schulze1, Carsten Schäffer1, Frank Hille2, Frank Umbach2, Guenter Mertens2, Nicole Rohn2, Daniel Bolowski2
1Infineon Technologies Austria AG, Austria;  2Infineon Technologies AG, Germany
 
12:20–13:50   Lunch Break
13:00–13:20   Luncheon Talk “Challenge accepted, Google!”
Paul Bleus (CE+T Power, Belgium)
 
 
13:50–15:30   Velký sál
B3L-A
High Voltage – IGBT 2

Chairs: Anup Bhalla (United Silicon Carbide, United States)
              Andrea Irace (University of Napoli, Italy)
13:50–14:15   Side Gate HiGT with Low dv/dt Noise and Low Loss
Masaki Shiraishi, Tomoyasu Furukawa, So Watanabe, Taiga Arai, Mutsuhiro Mori
Hitachi, Ltd., Japan
14:15–14:40   A 1200 V-Class Fin P-Body IGBT with Ultra-narrow-mesas for Low Conduction Loss
Hao Feng1, Wentao Yang1, Yuichi Onozawa2, Takashi Yoshimura2, Akira Tamenori2, Johnny K.O. Sin1
1The Hong Kong University of Science and Technology, Hong Kong;  2Fuji Electric Co., Ltd., Japan;
14:40–15:05   Trench Shielded Gate Concept for Improved Switching Performance with the Low Miller Capacitance
Mutsumi Sawada1, Kota Ohi1, Yoshihiro Ikura1, Yuichi Onozawa1, Masahito Otsuki1, Yoichi Nabetani2
1Fuji Electric Co., Ltd., Japan; 2University of Yamanashi, Japan
15:05–15:30   On the Scaling Limit of the Si-IGBTs with Very Narrow Mesa Structure
Katsumi Eikyu1, Atsushi Sakai1, Hitoshi Matsuura2, Yoshito Nakazawa2, Yutaka Akiyama1, Yasuo Yamaguchi1, Masahide Inuishi1
1Renesas Electronics Corp., Japan; 2Renesas Semiconductor Manufacturing Corp., Japan
 
14:40–15:30   Malý sál
B3L-B
Low Voltage – Trench Power MOSFETs

Chairs: Kenya Kobayashi (Toshiba Corporation, Japan)
              Yoshinao Miura (Renesas Electronics, Japan)
14:40–15:05   Breakdown Voltage Instability Mechanism and Improving Ruggedness in Trench Field Plate Power MOSFET
Tatsuya Nishiwaki, Shunsuke Katoh, Kenya Kobayashi, Yoshitaka Hokomoto
Toshiba Corporation, Japan
15:05–15:30   A Physically Based Scalable SPICE Model for Shielded-Gate Trench Power MOSFETs
James Victory1, Scott Pearson2, Stan Benczkowski2, Tirthajyoti Sarkar2, Hyeongwoo Jang3, Mehrdad Baghaei Yazdi1, Kangwie Mao1
1Fairchild Semiconductor, Germany; 2Fairchild Semiconductor, United States; 3Fairchild Semiconductor, South Korea
 
15:30–16:00   Coffee Break
 
16:00–17:40   Velký sál
B4L-A
Silicon Carbide – Diodes

Chairs: Anping Zhang (Xi'an Jiaotong University, China)
              Chih-Fang Huang (National Tsing Hua University, Taiwan)
16:00–16:25   A Novel Edge Termination for High Voltage SiC Devices
Andrei Mihaila1, Vinoth K. Sundaramoorthy1, Renato Amaral Minamisawa1, Lars Knoll1, Holger Bartolf1, Enea Bianda1, Giovanni Alfieri1, Munaf Rahimo2
1ABB Switzerland Ltd., Corporate Research, Switzerland;  2ABB Switzerland Ltd. Semiconductors, Switzerland;
16:25–16:50   Physics of Bipolar, Unipolar and Intermediate Conduction Modes in Silicon Carbide MOSFET Body Diodes
Vipindas Pala1, Edward Van Brunt1, Sei-Hyung Ryu1, Brett Hull1, Scott Allen1, John Palmour1, A. Hefner2
1Wolfspeed, A Cree Company, United States;  1National Institute of Standards and Technology, United States
16:50–17:15   Design and Experimental Demonstration of 1.35 kV SiC Super Junction Schottky Diode
Xueqian Zhong, Baozhu Wang, Kuang Sheng
Zhejiang University, China
17:15–17:40   Various Structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement
Shanmuganathan Palanisamy1, Susanne Fichtner1, Josef Lutz1, Thomas Basler2, Roland Rupp2
1Technische Universität Chemnitz, Germany;  2Infineon Technologies AG, Germany
 
16:00–17:40   Malý sál
B4L-B
Integrated Power – Low Voltage

Chairs: Giuseppe Croce (STMicroelectronics, Italy)
              Jun Cai (Texas Instruments, United States)
16:00–16:25   ESD Failure Mechanism and Optimization for the LDMOS with Low On-Resistance and Large Geometric Array Used as Output Device
Ran Ye1, Siyang Liu1, Weifeng Sun1, Wei Su2, Feng Lin2, Guipeng Sun2, Zhongyu Lin2
1Southeast University, China;  2CSMC Technologies Corporation, China
16:25–16:50   A Dual-Active-Bridge DC-DC Converter IC in 0.18µm, 80V BCD with Integrated High-Speed Digital Isolator and High-Precision Phase-Shift Control
Shahab Poshtkouhi1, Miad Fard1, Ikjoon Choi2, Ray Orr3, Christian Cojocaru3, Rony Amaya3, Olivier Trescases1
1University of Toronto, Canada; 2Magnachip Semiconductor, South Korea; 3Solantro Semiconductor, Canada;
16:50–17:15   A 30V bidirectional power switch in a CMOS technology using standard gate oxide
Priscilla Boos, Arjan Mels, Stephen Sque
NXP Semiconductors, The Netherlands
17:15–17:40   High Performance of PMSM Driver IC Integrated Sensorless and Current Sensing Circuits
Jimin Oh, Sewan Heo, Minki Kim, Jung-Hee Suk, Yilsuk Yang, Jongdae Kim
Electronics and Telecommunications Research Institute, South Korea
 
19:30   Municipal House – Smetana’s Hall
(Obecní dům – Smetanova síň)

Gala Dinner “In Art Nouveau”

Wednesday, June 15, 2016

 

08:30–10:10   Velký sál
C1L-A
Gallium Nitride – Application & Reliability

Chairs: Yasuhiro Uemoto (Panasonic, Japan)
              Frédéric Morancho (LAAS-CNRS, France)
08:30–08:55   GaN Cascode Performance Optimization for High Efficient Power Applications
Haw Yun Wu, Ming-Cheng Lin, Nan-Ying Yang, C.T. Tsai, C.B. Wu, Y.S. Lin, Y.C. Chang, P.C. Chen, K.Y. Wong, M. H. Kwan, C.Y. Chan, F.W. Yao, M.W. Tsai, C.L. Yeh, R.Y. Su, J.L. Yu, F.J. Yang, C.L. Tsai, H.C. Tuan, Alex Kalnitsky
TSMC, Taiwan
08:55–09:20   UIS Withstanding Capability and Mechanism of High Voltage GaN-HEMTs
Toshiyuki Naka, Wataru Saito
Toshiba Corporation, Japan;
09:20–09:45   Impact of VTH Shift on RON in E/D-Mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive
Shu Yang, Yunyou Lu, Shenghou Liu, Hanxing Wang, Cheng Liu, Kevin J. Chen
The Hong Kong University of Science and Technology, Hong Kong
09:45–10:10   Analysis of GaN-HEMTs Switching Characteristics for Power Applications with Compact Model Including Parasitic Contributions
Takeshi Mizoguchi1,2, Toshiyuki Naka1, Yuta Tanimoto2, Yasuhiro Okada2, Wataru Saito1, Mitiko Miura-Mattausch2, Hans Jürgen Mattausch2
1Toshiba Corporation, Japan;  2Hiroshima University, Japan;
 
10:10–10:40   Coffee Break
 
10:40–12:20   Velký sál
C2L-A
Silicon Carbide – MOSFETs

Chairs: Yoshiyuki Yonezawa (AIST, Japan)
              Nando Kaminski (University of Bremen, Germany)
10:40–11:05   Demonstration of 3 kV 4H-SiC Reverse Blocking MOSFET
Seigo Mori1, Masatoshi Aketa1, Takui Sakaguchi1, Hirokazu Asahara1, Takashi Nakamura1, Tsunenobu Kimoto2
1ROHM Co., Ltd., Japan;  2Kyoto University, Japan;
11:05–11:30   Energy Capability of SiC MOSFETs
Christian Unger1, Martin Pfost2
1Reutlingen University, Germany; 2University of Innsbruck, Austria
11:30–11:55   Manufacturable and Rugged 1.2 kV SiC MOSFETs Fabricated in High-Volume 150mm CMOS Fab
Sujit Banerjee, Kevin Matocha, Kiran Chatty, John Nowak, Blake Powell, Dave Gutierrez, Chris Hundley
Monolith Semiconductor Inc., United States
11:55–12:20   4.5kV SiC MOSFET with Boron Doped Gate Dielectric
Victor Soler1, Maria Cabello1, Josep Montserrat1, José Rebollo1, José Millán1, Philippe Godignon1, Maxime Berthou2, Enea Bianda3, Andrei Mihaila3
1Centre Nacional de Microelectrònica IMB-CNM, Spain; 2CALY Technologies, France;  3ABB Switzerland Ltd., Corporate Research, Switzerland
 
12:20–13:50   Lunch Break
 
13:50–15:30   Velký sál
C3L-A
High Voltage – Diode & Superjunction

Chairs: Madhur Bobde (Alpha & Omega Semiconductor, United States)
              Yong Chul Choi (Fairchild Semiconductor, South Korea)
13:50–14:15   A Novel Edge Termination Structure for Achieving the Ideal Planar Junction Breakdown Voltage
Wentao Yang1, Hao Feng1, Xiangming Fang1, Yuichi Onozawa2, Hiroyuki Tanaka2, Johnny K.O. Sin1
1Hong Kong University of Science and Technology, Hong Kong;  2Fuji Electric Co., Ltd., Japan
14:15–14:40   High Voltage Device Edge Termination for Wide Temperature Range plus Humidity with Surface Charge Control (SCC) Technology
Shigeto Honda, Tatsuo Harada, Akito Nishii, Ze Chen, Kazuhiro Shimizu
Mitsubishi Electric Corporation, Japan
14:40–15:05   Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench
Masanori Tsukuda1, Akiyoshi Baba2, Yuji Shiba2, Ichiro Omura2
1Green Electronics Research Institute, Japan; 2Kyushu Institute of Technology, Japan
15:05–15:30   Experimental Investigation of 650V Superjunction IGBTs
Kwang-Hoon Oh, Jisun Kim, Hoewon Seo, Jinyoung Jung, Euntaek Kim, Soo-Seong Kim, Chongman Yun
TRinno Technology, South Korea
 
15:30–17:30   Malý sál
Coffee & Poster Session

Chair: Jan Vobecký (ABB, Switzerland)
    C4P-C
High Voltage (Poster Session)
    Fast Recovery High-Power P-i-N Diode with Heavily Shorted Cathode for Enhanced Ruggedness in the Circuits with IGCTs
Libor Pína1, Jan Vobecký2
1ABB s.r.o., Semiconductors, Czech Republic; 2ABB Switzerland Ltd. Semiconductors, Switzerland
    A Novel Diode-Clamped CSTBT with Ultra-low On-state Voltage and Saturation Current
Ping Li, Moufu Kong, Xingbi Chen
University of Electronic Science and Technology of China, China
    Experimentally Demonstrate a Cathode Short MOS-Controlled Thyristor (CS-MCT) for Single or Repetitive Pulse Applications
Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Hongquan Liu, Qi Zhou, Zhaoji Li, Bo Zhang
University of Electronic Science and Technology of China, China
    Simple simulation approach for the first trigger step of SEB (Single Event Burn-out) based upon physical analysis for Si high voltage bipolar device
Yasuhiro Yoshiura1, Mitsuharu Tabata1, Hiroki Muraoka1, Nobutake Taniguchi1, Kenji Suzuki1, Shinji Aono1, Masayoshi Tarutani1, Tadaharu Minato1, Kenji Takakura2, Katsumi Uryu3
1Mitsubishi Electric Corporation, Japan; 2MELCO Semiconductor Engineering Corporation, Japan; 3Mitsubishi Electric Information Network, Japan
    Growth of short-circuit current filament in MOSFET-Mode IGBTs
Masahiro Tanaka1, Akio Nakagawa2
1Nihon Synopsys G.K., Japan; 2Nakagawa Consulting Office, LLC., Japan;
    Low-inductive power systems to overcome short-circuit ruggedness limits
Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Frank Pfirsch, Caspar Leendertz
Infineon Technologies AG, Germany
    A Low Loss IGBT with Shallow p-Well to Adjust the Carrier Profiles at the Emitter Side
Zhuo Yang1, Jing Zhu1, Weifeng Sun1, Jincheng Zhou1, Yuanzheng Zhu2, Peng Ye2, Zongqing Li2
1Southeast University, China; 2WUXI NCE Power CO., LTD, China
    Design Criterion of the SuperJunction DMOS for Low EMI Noise in the Flyback Converter System
Jing Zhu1, Zhuo Yang1, Weifeng Sun1, Yi Sun1, Jincheng Zhou1, Yuanzheng Zhu2, Peng Ye2, Zongqing Li2
1Southeast University, China; 2WUXI NCE Power CO., LTD, China
    Short-Circuit Safe Operating Area of Superjunction MOSFETs
Martin Pfost1, Christian Unger2, Gabriel Cretu2, Marius Cenusa2, Kevni Büyüktas3, Uwe Wahl3
1University of Innsbruck, Austria;  2Reutlingen University, Germany; 3Infineon Technologies AG, Germany
    IGBT Avalanche Current Filamentation Ratio: Precise Simulations on Mesh and Structure Effect
Yuji Shiba1, Ichiro Omura1, Masanori Tsukuda2
1Kyushu Institute of Technology, Japan;  2Green Electronics Research Institute Kitakyushu, Japan
    An electro-thermal SPICE model for Reverse Conducting IGBT: simulation and experimental validation
Michele Riccio, Marianna Tedesco, Paolo Mirone, Giuseppe De Falco, Luca Maresca, Giovanni Breglio, Andrea Irace
University of Naples Federico II, Italy
    RCDC-IGBT Study for low-Voltage Applications
Johannes Georg Laven1, Roman Baburske1, Alexander Philippou1, Haybat Itani2, Matteo Dainese2
1Infineon Technologies AG, Germany; 2Infineon Technologies Austria AG, Austria
    Tailoring of Field-stop Layers in Power Devices by Hydrogen-related Donor Formation
Franz-Josef Niedernostheide1, Hans-Joachim Schulze1, Hans-Peter Felsl1, Frank Hille1, Johannes Georg Laven1, Manfred Pfaffenlehner1, Carsten Schäffer2, Holger Schulze2, Werner Schustereder2
1Infineon Technologies AG, Germany; 2Infineon Technologies Austria AG, Austria
    Use of 300 mm Magnetic Czochralski Wafers for the Fabrication of IGBTs
Hans-Joachim Schulze1, Helmut Öfner1, Franz-Josef Niedernostheide1, Johannes Georg Laven1, Hans-Peter Felsl1, Stephan Voss1, Andre Schwagmann1, Moriz Jelinek2, Naveen Ganagona2, Alexander Susiti2, Thomas Wübben2, Werner Schustereder2, Alexander Breymesser2, Michael Stadtmüller2, Andreas Schulz3, Thorsten Kurz3, Florian Lükermann3
1Infineon Technologies AG, Germany; 2Infineon Technologies Austria AG, Austria; 3Infineon Technologies Warstein, Germany
    A Comparative Study of Cosmic Radiation Hardness and Electrical Performance of Power Diode Concepts
Frank Hille1, Andreas Härtl1, Gerald Sölkner1, Christoph Weiß1, Frank Pfirsch1, Holger Schulze2, Stefan Aschauer3
1Infineon Technologies AG, Germany; 2Infineon Technologies Austria AG, Austria; 3PNSensor GmbH, Germany
    Experimental Demonstration of the Active Trench Layout Tuned 1200V CSTBTTM for Lower dV/dt Surge and Turn-on Switching Loss
Kazuya Konishi, Ryu Kamibaba, Mariko Umeyama, Atsushi Narazaki, Tetsuo Takahashi, Akihiko Furukawa, Masayoshi Tarutani
Mitsubishi Electric Corporation, Japan
    Direct Photo Emission Motion Observation of Current Filaments in the IGBT under Avalanche Breakdown Condition
Koichi Endo1, Shinji Nagamine1, Wataru Saito1, Tomoko Matsudai1, Tsuneo Ogura1, Takashi Setoya1, Koji Nakamae2
1Toshiba Corporation, Japan;  2Osaka University, Japan
    4.5kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode
Neophytos Lophitis1,2, Marina Antoniou1, Florin Udrea1, Umamaheswara Reddy Vemulapati3, Martin Arnold4, Munaf Rahimo4, Jan Vobecky4
1University of Cambridge, United Kingdom; 2Coventry University, United Kingdom; 3ABB Switzerland Ltd., Corporate Research, Switzerland; 41ABB Switzerland Ltd. Semiconductors, United Kingdom
 
    C4P-D
Low Voltage (Poster Session)
    Doping Engineering for Improved Immunity against BV Softness and BV Shift in Trench Power MOSFET
Shengling Deng, Zia Hossain, Peter Burke
ON Semiconductor, United States
    Optimizing the Trade-off Between the RDS(on) of Power MOSFETs and Linear Mode Performance by Local Modification of MOSFET Gain
Mo-Huai Chang, Phil Rutter
NXP Semiconductors, United Kingdom
    Investigation on Hot-Carrier-Induced Degradation of STI-nLDMOS with Two-Step-Oxide Process for High Side Application
Jiaxing Wei1, Chunwei Zhang1, Siyang Liu1, Weifeng Sun1, Wei Su2, Aijun Zhang2, Shulang Ma2
1Southeast University, China;  2CSMC Technologies Corporation, China
    60 V Rating Split Gate Trench MOSFETs Having Best-in-Class Specific Resistance and Figure-of-Merit
Chanho Park, Sanjay Havanur, Ayman Shibib, Kyle Terrill
Vishay Siliconix, Inc., United States
    3-D TCAD Simulation to Optimize the Trench Termination Design for Higher and Robust BVDSS
Zia Hossain1, Gourab Sabui2, Jim Sellers1, Brain Pratt1, Ali Salih1
1ON Semiconductor, United States; 2Illinois Institute of Technology, United States
    Surface analysis of smart power top metal: IR thermal measurement and source potential mapping
Mounira Berkani1, Stéphane Lefebvre2, Gilles Rostaing2, Michele Riccio3, Andrea Irace3, Roberta Ruffilli4, Philippe Dupuy4
1UPEC Val de Marne, France; 2CNAM, ENS de Cachan, France; 3University of Naples Federico II, Italy;4NXP Semiconductors, France;
 
    C4P-E
Integrated Power (Poster Session)
    Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications
Stephanie Banzhaf1, Stephan Schwaiger1, Tobias Erlbacher2, Anton Bauer2, Lothar Frey2,3
1Robert Bosch GmbH, Germany;  2Fraunhofer IISB, Germany; 3University of Erlangen-Nurember, Germany
    Advanced 300mm 130nm BCD technology from 5V to 85V with Deep-Trench Isolation
Namchil Mun, Shiang Yang Ong, Ke Dong, Jeoung Mo Koo, Kun Liu, Michael Tiong, Raj Verma Purakh, Rajesh Nair
Globalfoundries, Singapore
    Gate Sensed Method of Load Current Imbalance Measuring for Paralleling IGBT Devices
Xiao Zeng1, Zehong Li1, Fashun Yang2, Qian Chen1, Min Ren1, Jinping Zhang1, Wei Gao1, Zhaoji Li1, Bo Zhang1
1University of Electronic Science and Technology of China, China; 21Guizhou University, China
    On the ESD Self-Protection Capability of Integrated UHV Resistor
Hyunchul Nah, Joo-Hyung Kim, Chang-Eun Lee, Tae-Young Joung, Lury Lee, Sang-Gi Lee, Yoon-Jong Lee
Dongbu Hitek, South Korea
    A New Compact, Low On Resistance and High Off Isolation High Voltage Analog Switch IC Without Using High Voltage Power Supplies for Ultrasound Imaging System
Fumiaki Yamashita, Junichi Aizawa, Hironobu Honda
Hitachi Power Semiconductor Device, Ltd., Japan
    0.13 µm modular BCD technology enable to embedding high density E2PROM, RF and Hall sensor suitable for IoT application
Junghwan Lee, Kyungho Lee, Inchul Jung, Hyunchul Kim, Heebaeg An, Taehoon Lee, Taejong Lee
Magnachip Semiconductor, South Korea
    0.18µm 100V-Rated BCD with Large Area Power LDMOS with Ultra-Low Effective Specific Resistance
Hanseob Cha, Kyungho Lee, Junghwan Lee, Taejong Lee
Magnachip Semiconductor, South Korea
    CMOS SOI Gate Driver with Integrated Optical Supply and Optical Driving for Fast Power Transistors
Nicolas Rouger, Thanh-Long Le, Davy Colin, Jean-Christophe Crébier
G2Elab / Université Grenoble Alpes / CNRS, France
    Implementation of high density embedded 3-Dimensional Mim Capacitor integrated in compatible logic process
Jaeho Hwang, Sanghyun Lee, Jongtaek Hwang, Kyoungwook Ro, Sanghyun Lee, Jaehee Lee, Derek Lee
SK hynix Inc., South Korea
 

Thursday, June 16, 2016

 

08:30–10:35   Velký sál
D1L-A
Integrated Power – High Voltage

Chairs: Olivier Trescases (University of Toronto, Canada)
              Alexander Hölke (XFAB, Malaysia)
08:30–08:55   2000 V SOI LDMOS with New Drift Structure for HVICs
Takashi Okawa, Hiroomi Eguchi, Masato Taki, Kimimori Hamada
Toyota Motor Corporation, Japan
08:55–09:20   A Novel High-voltage Interconnection Structure with Dual Trenches for 500V SOI-LIGBT
Long Zhang1, Jing Zhu1, Weifeng Sun1, Meng Chen1, Chao Huang1, Feng Zhou1, Yan Gu2, Sen Zhang2, Wei Su2
1Southeast University, China; 2CSMC Technologies Corporation, China
09:20–09:45   Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devices
Van-Sang Nguyen1,2, Thanh-Long Le1,2, Farshid Sarrafin1,5, Ngoc-Duc To1,2, Davy Colin1,2, Nicolas Rouger1,2, Pierre Lefranc1,2, Yves Lembeye1,2, Jean-Daniel Arnould3,4, Bruno Allard5, Jean-Christophe Crebier1,2
1Univ. Grenoble Alpes, G2ELab, France; 2CNRS, G2ELab, France; 3Univ. Grenoble Alpes, IMEP-LAHC, France; 4CNRS, IMEP-LAHC, France; 5INSA Lyon, France
09:45–10:10   Integrated SOI Gate Driver for 1200V SiC-FET Switches
Bastian Vogler, Reinhard Herzer, Iyead Mayya, Sven Buetow
SEMIKRON Elektronik, Germany
10:10–10:35   Integration of GaN HEMTs onto Silicon CMOS by Micro Transfer Printing
Ralf Lerner1, Stefan Eisenbrandt1, Christopher Bower2, Salvatore Bonafede2, Alin Fecioru2, Richard Reiner3, Patrick Waltereit3
1X-FAB Semiconductor Foundries AG, Germany; 2X-Celeprint Ltd, Ireland;  3Fraunhofer Institute for Applied Physics, Germany;
 
08:30–10:35   Malý sál
D1L-B
Late News – Wide Band Gap

Chairs: Kevin Chen (The Hong Kong University of Science and Technology, China)
              Peter Losee (GE, United States)
08:30–08:55   AlGaN/GaN Power Device Technology for High Current (100+ A) and High Voltage (1.2 kV)
Peter Moens, Abhishek Banerjee, Peter Coppens, Frederick Declercq, Marnix Tack
ON Semiconductor, Belgium
08:55–09:20   Over 10 A Operation with Switching Characteristics of 1.2 kV-Class Vertical GaN Trench MOSFETs on a Bulk GaN Substrate
Tohru Oka, Tsutomu Ina, Yukihisa Ueno, Junya Nishii
TOYODA GOSEI Co., Ltd., Japan
09:20–09:45   High Voltage 4H-SiC Bi-Directional IGBTs
Sauvik Chowdhury, Collin Hitchcock, Rajendra P. Dahal, Ishwara Bhat, T. Paul Chow
Rensselaer Polytechnic Institute, United States
 
 
10:35–11:05   Coffee Break
 
11:05–12:45   Velký sál
D2L-A
Packaging & Integration – Multi-Chip Modules

Chairs: Kimimori Hamada (Toyota Motor, Japan)
              Sven Berberich (Semikron, Germany)
11:05–11:30   A New Concept of a High-Current Power Module Allowing Paralleling of Many SiC Devices Assembled Exploiting Conventional Packaging Technologies
Slavo Kicin1, Felix Traub1, Samuel Hartmann2, Enea Bianda1, Christof Bernhard1, Stanislav Skibin1, Francisco Canales1
1ABB Switzerland Ltd., Corporate Research, Switzerland;  2ABB Switzerland Ltd. Semiconductors, Switzerland
11:30–11:55   Development of Heat Sink Integrated Transfer molded Power Modules with Thermal Conductive Insulating Sheet
Kei Yamamoto, Hodaka Rokubuichi, Takashi Nishimura, Seiki Hiramatsu, Dai Nakajima, Kiyofumi Kitai, Yoichi Goto
Mitsubishi Electric Corp., Japan
11:55–12:20   Novel IGBT Modules with Epoxy Resin Encapsulation and Insulating Metal Baseplate
Yusuke Kaji, Yasumichi Hatanaka, Seiki Hiramatsu, Satoshi Kondo, Shinsuke Asada, Yoshitaka Otsubo
Mitsubishi Electric Corp., Japan
12:20–12:45   High Performance SiC MOSFET Module for Industrial Applications
Ljubisa Stevanovic, Brian Rowden, Maja Harfman-Todorovic, Peter Losee, Alexander Bolotnikov, Stacey Kennerly, Tobias Schuetz, Fabio Carastro, Rajib Datta, Fengfeng Tao, Ravi Raju, Philip Cioffi
GE Global Research, United States
 
12:45–13:45   Lunch Break
 
13:45–15:00   Velký sál
D3L-A
Silicon Carbide & Diamond – Novel Devices

Chairs: Ranbir Singh (GeneSiC, United States)
              Kung-Yen Lee (National Taiwan University, Taiwan)
13:45–14:10   Diamond MOSFETs Using 2D Hole Gas with 1700V Breakdown Voltage
Hiroshi Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa
Waseda University, Japan
14:10–14:35   Experimental Demonstration of SiC Screen Grid Vertical JFET (SiC-SGVJFET) Having a Ultra-Low Crss
Koji Yano1, Tsuyoshi Ishikawa2, Yasunori Tanaka3, Tsutomu Yatsuo3, Masayuki Yamamoto1
1University of Yamanashi, Japan; 2Toyota central R&D Lab, Japan;  3National Institute of Advanced Industrial Science and Technology, Japan;
14:35–15:00   Orthogonal Optimization Design for Structural Parameters of SiC Reversely Switched Dynistor
Lin Liang, Yuxiong Shu, Ludan Zhang, Ming Pan
Huazhong University of Science and Technology, China
 
15:00–15:30   Velký sál
Closing Session
    Charitat and Best Poster Award
Jan Šonský, General Chair (NXP Semiconductors, Belgium)
Oliver Häberlen, Technical Program Chair (Infineon Technologies, Austria)
    Closing Remarks
Jan Šonský, General Chair (NXP Semiconductors, Belgium)
    ISPSD’17 Announcement
Mutsuhiro Mori, General Chair ISPSD’17 (Hitachi, Ltd., Japan)