ISPSD 2016 Charitat Award

A 1200 V-class Fin P-body IGBT with Ultra-narrow-mesas for Low Conduction Loss

Hao Feng
Department of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

Abstract – In this paper, a new 1200 V-class ultra-narrow-mesas fin p-body IGBT (U-Fin-P IGBT) is proposed. Compared with the previously demonstrated fin p-body IGBT, the proposed device features a much narrower fin (mesa) width (~ 0.5 µm), resulting in a significantly higher injection enhancement effect while still maintaining a 10 µs short circuit capability. In terms of device implementation, the difficulty of doing emitter contact lithography on top of the ultra-narrow mesa regions is resolved by using a self-aligned contact formation process design. It is found from numerical simulations that for the same turn-off energy loss, the on-state voltage drop Von (at 150 °C) of the U-Fin-P IGBT is ~ 21% lower than that of the fin p-body IGBT. Furthermore, the U-Fin-P IGBT also shows excellent turn-on dV/dt controllability.

 

Hao Feng

Hao Feng received the B.S. degree in electronic science and technology from the Xi’an Jiaotong University, Xi’an, China, in 2010. He then went to the Hong Kong University of Science and Technology, Hong Kong, China, where he received the Ph.D. degree in electronic and computer engineering in 2016. He is now working as a research associate at the Department of Electronic and Computer Engineering, the Hong Kong University of Science and Technology. His research interests include novel power semiconductor devices and technologies.

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